(Solved): 9. You are utilising a 1550nm GaAs IR LED for optical communications. Within the LED structure, a ...

9. You are utilising a $1550\mathrm{nm}$ GaAs IR LED for optical communications. Within the LED structure, an active layer is doped $p$-type with $1.95\times 10^{17}{\mathrm{cm}}^{-3}$ of acceptors and the non-radiative lifetime is approximately $85\mathrm{ns}$. When a forward bias of $25\mathrm{mA}$ is applied the voltage across the LED is $1.30\mathrm{V}$, and the emitted optical power is $6.5\mathrm{mW}$. The radiative lifetime is $35\mathrm{ns}$. a. Calculate the internal quantum efficiency (IQE) for this device. b. Calculate the external quantum efficiency (EQE) for this device. c. Calculate the power conversion efficiency (PCE) for this device. d. Estimate the light extraction ratio (EE) for this device.