(Solved): An MOS capacitor is fabricated on a p-type silicon substrate with doping conc ...

???????

An MOS capacitor is fabricated on a p-type silicon substrate with doping concentration $${\mathrm{N}}_{\mathrm{a}}=10^{16}{\mathrm{cm}}^{?3}$$, using an $$\mathrm{n}+$$ polysilicon gate $$\left({?}_{{\mathrm{n}}^{+}}=0.55\mathrm{eV}\right)$$. (a) What is the flatband voltage, $$V_{\mathrm{FB}}$$ ? (b) What is the surface potential in inversion? (c) What is the maximum width of the depletion region? (d) For tox $$=200$$ Angstroms, what is the threshold voltage $$V_t$$ ?