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(Solved): Boron is predeposited at 3.5 x 1020 atoms/cm3 on a Silicon wafer with an initial concentration of 4 ...



Boron is predeposited at 3.5 x 1020 atoms/cm3 on a Silicon wafer with an initial concentration of 4 x 1015 atoms/cm3 . Conditions are 25 minutes at 1123 K with D = 1.3 x 10-3 ? 2 /hr. Calculate the concentration at a diffusion length



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