n-side: Nd=5×1018cm−3P-side: Na=1017cm−3 junction area A=10−2cm2 carrier liletime Tn=Tp=2Ms. a) Find the built-in potential V0 b) Find the reverse saturation curvent 'Io c) Find the ratio of hole injection current to electron injection current at a forward current of ImA d) Find the total minority carrier charge each side of the diode at a forward current of ImA e) In the p-side of the diode, at a certain distance away from the depletion region., the hole and election currents are equal in magnitude, but opposite in direction. Find this distance.
a) To find the built-in potential (V_o) of the p-n junction, we can use the formula: where k is Boltzmann's constant, T is the temperature in Kelvin, q is the charge of an electron, are the acceptor and donor concentrations, and ni is the intrinsic carrier concentration.Given:
(at room temperature)We can convert the area to square meters:
Using the formula, we can calculate