(Solved): Please type your answers or give clear handwriting. Answer according to marks provided. Will give a ...

Please type your answers or give clear handwriting. Answer according to marks provided. Will give a like

(e) Consider an non Si bipolar junction transistor which is to be (4 marks) designed with an emitter efficiency of y= 0.995. To maintain a reasonable base resistance, the base is doped with boron of N? = 1.2x10¹ cm³. Given that LW, = 0.7?m. D. = 12cm³s¹, D? = 30cm²s¹ and n = 1.88x10 cm³, calculate the n-type doping concentration needed in the emitter.